III-V Compound Semiconductor Devices for Future Electronics
Dr. Yuping Zeng
时间:2016.7.6
地点:白鹿会馆二楼中型会议室
主讲人:曾毓萍
Abstract
Innovating electronic materials and related process technologies are critical in achieving advanced devices with high performances and new systems with complex functions.
III-V compound semiconductors are attractive due to their small effective masses and high electron mobility. My research has been focused on design and fabrication of electron devices with III-V compound semiconductors. In this talk, I will talk about InAs/AlSb/GaSb tunneling field effect transistors (TFETs) for low power applications and high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) for high performance applications. The motivations and operating principles will be presented for both transistors. The novel material designs, fabrication process technology and device design, will be discussed. Tunneling diodes with record high peak-to-valley current ratio and tunneling field effect transistors with high on-current density were achieved. High speed double heterojunction bipolar transistors with record high fMAX over 500GHz were demonstrated as well.
At the end, future work will be discussed in terms of further developing new materials, devices and technology, integration of these novel devices on silicon substrates and realizing novel systems for our daily life applications.
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